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SPP80N06S2L-07
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -3-2P- TO220 -3-1
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics1Current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 121A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipationPtot = f (TC)
parameter: VGS³ 4 V
20
40
60
80
100
120
140
160
180
200
240 SPP80N06S2L-07
tot
2 Drain currentID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90 SPP80N06S2L-07
4 Max. transient thermal impedanceZthJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP80N06S2L-07
thJC
3 Safe operating areaID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N06S2L-07
5 Typ. output characteristicID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190 SPP80N06S2L-07
6 Typ. drain-source on resistanceRDS(on) = f (ID)
parameter: VGS
10
12
14
16
18
20
24 SPP80N06S2L-07
DS(on)
7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
80
90
110
9 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 60 A, VGS = 10 V
10
12
14
16
18
20
22 SPP80N06S2L-07
DS(on)
10 Typ. gate threshold voltageVGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeIF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPP80N06S2L-07