SPP80N06S2-09 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPP80N06S2-09
N-Channel OptiMOS Power Transistor
SPP80N06S2-09
SPB80N06S2-09Preliminary data
OptiMOS-
=Power-Transistor
Product Summary
Feature N-Channel Enhancement mode175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1
SPP80N06S2-09
SPB80N06S2-09Preliminary data
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire; with a RthJC = 0.8 K/W the chip is able to carry ID = 99A
and calculated with max. source pin temperature of 85°C.
SPP80N06S2-09
SPB80N06S2-09Preliminary data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPP80N06S2-09
SPB80N06S2-09Preliminary data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
200 SPP80N06S2-09
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
20
30
40
50
60
70
90 SPP80N06S2-09
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N06S2-09
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
SPP80N06S2-09
thJC
SPP80N06S2-09
SPB80N06S2-09Preliminary data
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190 SPP80N06S2-09
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
12
14
16
18
20
22
24
30
SPP80N06S2-09
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
15
30
45
75
SPP80N06S2-09
SPB80N06S2-09Preliminary data
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
10
12
14
16
18
20
22
24
SPP80N06S2-09
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP80N06S2-09
