SPP80N06S-08 ,TO220/262/263; 80 A; 55V; NL; 8 mOhmFeaturesV 55 VDS• N-channel - Enhancement modeR (SMD version) 7.7mΩDS(on),max• Automotive AEC Q101 ..
SPP80N06S2-09 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPP80N06S-08
TO220/262/263; 80 A; 55V; NL; 8 mOhm
technologies
SPB80N06S-08
SPl80N06S-08, SPP80N06S-08
SIPMOS® Power-Transistor
Features
. N-channel - Enhancement mode
Product Summary
V03 55 v
Rosmmax (SMD version) 7.7 mn
. Automotive AEC Q101 qualified ID 80 A
. MSL1 up to 260°C peak reflow
. 175°C operating temperature
P-T0263-3-2 P-TO262-3-I P-TO220-3-1
. Avalanche test
. Repetive Avalanche up to '
Tjmax = 175 "C -3
. dv/dt rated
Type Package Ordering Code Marking drain
SPB80N06S-08 P-T0263-3-2 Q67060-S6185 1N0608
SPI80N06S-08 P-T0262-3-1 Q67060-S6187 1N0608 pin 1
SPP80N06S-08 P-T0220-3-1 Q67060-S6186 1N0608 gnugce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current" In Tc=25 ''C, VGs=10 V 80 A
Tc=100 ''C, VGS=10 V 80
Pulsed drain current” lD,pu|se Tc=25 ''C 320
I = A R =2 n
Avalanche energy, single pulse E AS D 80 , GS 5 , 700 mJ
VDD=25 V
Avalanche energy, periodido EAR T15175 ''C 30
[0:80 A, Vos=40 V,
Reverse diode dv/dt2) dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage V65 :20 V
Power dissipation Ptot TC=25 ''C 300
Operating and storage temperature Ts, Tstg -55 ... +175 "C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.0 page 1 2004-11-30
technologies
SPB80N06S-08
SPl80N06S-08, SPP80N06S-08
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics')
Thermal resistance, junction - case RM; - 0.38 0.5 K/W
Thermal resistance, junction - R - - 62
ambient, leaded thJA
SMD version, device on PCB RmJA minimal footprint - - 62
6 cm2 cooling area3) - - 40
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, I D=1 mA 55 - - v
Gate threshold voltage Vesun) VDS=VGS, ID=240 pA 2.1 3.0 4
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 pA
Tr-M C
V =25 V, V =0 V,
DS o 2) GS - 10 100
Tr=150 C
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - 10 100 nA
Drain-source on-state resistance RDSM Vss=10 V, ID=80 A - 6.5 8 m9
VGS=10 V, ID=80 A
SMD version - 6.2 7.7
lVDsl>2llolRDson)max,
2) - -
Transconductance " [0:80 A 73 S
footnote on page 3
Rev. 1.0 page 2 2004-11-30
