SPP46N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.015R Ω• Enhanceme ..
SPP46N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D1.2 1.6 2Gat ..
SPP47N10L ,Low Voltage MOSFETsFeatureV100 VDS
SPP46N03
N-Channel SIPMOS Power Transistor
SPP46N03
SIPMOS Power Transistor
Product Summary
Features• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
Pin 1Pin 2Pin 3DS
SPP46N03
Thermal Characteristics
Characteristics
Static Characteristicscurrent limited by bond wire Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
SPP46N03
Dynamic Characteristics
SPP46N03
Dynamic Characteristics
Reverse Diode
SPP46N03
Power Dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
130
tot
Drain currentD = f (TC)
parameter: VGS ≥ 10 V
10
15
20
25
30
35
40
45
55
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
thJC
Safe operating areaD = f (VDS)
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP46N03
Typ. output characteristicsD = f (VDS)
parameter: tp = 80 μs
10
20
30
40
50
60
70
80
90
100
120
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: VGS
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.050
DS(on)
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 μsDS ≥ 2 x ID x RDS(on)max
10
15
20
25
30
35
40
45
50
55
60
70
Typ. forward transconductancefs = f(ID); Tj = 25°C
parameter: gfs
10
15
20
25
30
35
45
