SPP20N60CFD ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.22 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Worldwide best R in TO 2 ..
SPP20N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 12 - Sfs DS D DS(on)maxI =13ADInput capacitance C V ..
SPP20N60S5. ,for lowest Conduction LossesCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 0.6 K/WThermal resistance, junction ..
SPP20N65C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Worldwide best R in TO 2 ..
SPP21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPP2301AS23RG , P-Channel Enhancement Mode MOSFET
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
SPP20N60CFD
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Feature· New revolutionary high voltage technology
· Worldwide best R
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
P-TO220-3-1
Maximum Ratings
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Typical Transient Thermal Characteristics
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240
SPP20N60CFD
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
50
70
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
40
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.6
0.9
1.5
DS(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1 SPP20N60CFD
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
50
70
