SPP20N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Worldwide best ..
SPP20N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Worldwide best R in TO 2 ..
SPP20N60C3. ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP20N60CFD ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.22 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Worldwide best R in TO 2 ..
SPP20N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 12 - Sfs DS D DS(on)maxI =13ADInput capacitance C V ..
SPP20N60S5. ,for lowest Conduction LossesCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 0.6 K/WThermal resistance, junction ..
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
SPP20N60C2
for lowest Conduction Losses & fastest Switching
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product SummaryP-TO220-3-31
Maximum Ratings
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
Electrical Characteristics
Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
Electrical Characteristics
Characteristics
Typical Transient Thermal Characteristics
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPP20N60C2
tot
2 Power dissiaption FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
35
40
45
50
55
60
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPP20N60C2, SPB20N60C2
SPA20N60C2Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
1.5
DS(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPP20N60C2
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
25
30
35
40
45
50
55
60
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 20 A pulsed
10
12
16 SPP20N60C2
