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SPP11N65C3
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Feature· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Improved transconductance
P-TO262-3-1P-TO220-3-31P-TO220-3-1
Maximum Ratings
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Electrical Characteristics
Typical Transient Thermal Characteristics
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N65C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
5 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
6 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
20
24
28
32
40
7 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
8 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.6
0.8
1.2
1.4
1.6
DS(on)
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP11N65C3
DS(on)
10 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
28
32
40
12 Forward characteristics of body diodeF = f (VSD)
parameter: Tj , tp = 10 µs
-1 10 10 10 10
SPP11N65C3
11 Typ. gate chargeGS = f (QGate)
parameter: ID = 11 A pulsed
10
12
16 SPP11N65C3
