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Partno	Mfg	Dc	Qty	Available	Descript
SPP11N60CFD	Infineon	N/a	100	avai	for lowest Conduction Losses & fastest Switching

SPP11N60CFD ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.44 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
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SPP1305S32RG , P-Channel Enhancement Mode MOSFET
ST1394-01SC6 ,IEEE1394 ONE PORT CABLE TERMINATION NETWORK WITH ESD PROTECTION DIODES
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART

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SPP11N60CFD
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Feature
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
P-TO220-3-1
Maximum Ratings
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Gate Charge Characteristics
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
1 Power dissipation
Ptot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N60CFD
tot
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
40
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
DS(on)
7 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2 SPP11N60CFD
DS(on)
8 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
25
30
40

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