SPP11N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SPP11N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 1 K/WThermal resistance, junction - ..
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SPP11N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
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SPP11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.45 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
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SPP11N60C2
for lowest Conduction Losses & fastest Switching
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product SummaryP-TO220-3-31
Maximum Ratings
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
Electrical Characteristics
Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
Electrical Characteristics
Characteristics
Typical Transient Thermal Characteristics
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N60C2
tot
2 Power dissiaption FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
-4 10
-3 10
-2 10
-1 10 10 10
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
SPP11N60C2, SPB11N60C2
SPA11N60C2Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.5
DS(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP11N60C2
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
32
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 11 A pulsed
10
12
16 SPP11N60C2
