SPP10N10 ,N-Channel SIPMOS Power TransistorFeatureV100 VDS
SPP10N10
Low Voltage MOSFETs
Preliminary dataSPI10N10
SPP10N10,SPB10N10
SIPMOS Power-Transistor
Product Summary
Feature N-Channel Enhancement mode175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Preliminary dataSPI10N10
SPP10N10,SPB10N10
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Preliminary dataSPI10N10
SPP10N10,SPB10N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPI10N10
SPP10N10,SPB10N10
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
55
SPP10N10
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
12 SPP10N10
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 10 10 10 10
SPP10N10
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Preliminary dataSPI10N10
SPP10N10,SPB10N10
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
25
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
50
100
150
200
250
300
400
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
12
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
Preliminary dataSPI10N10
SPP10N10,SPB10N10
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7.8 A, VGS = 10 V
50
100
150
200
250
300
350
400
450
500
550
600
SPP10N10
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
SPP10N10
