SPP02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...CharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.V V =0V, I =0.25mA 800 - - VDra ..
SPP02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 2.7 ΩDS(on)• New revolutionary high voltage technologyI 2 AD• Ultra low gate chargeP-TO220 ..
SPP03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP03N60S5 ,for lowest Conduction LossesFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPP04N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPP04N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 2.5 - Sfs DS D DS(on)maxI =2.8ADInput capacitance C ..
ST1284-02A8 ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONABSOLUTE MAXIMUM RATINGS (T 25°C)ambSymbol Parameter Value UnitV ESD discharge IEC61000-4-2, air di ..
ST1284-02A8RL ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONFEATURESn One device for parallel port terminationSCHEMATIC DIAGRAMn Compliant with IEEE1284 standa ..
ST1284-03 , PARALLEL PORT SINGLE TERMINATION NETWORK WITH ±15kV ESD PROTECTION
ST13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
ST13003-K ,High voltage fast-switching NPN power transistorElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitV = 700 V 1 mACollect ..
ST13003-K ,High voltage fast-switching NPN power transistorApplications32 • Electronic ballast for fluorescent lighting (CFL)1• SMPS for battery chargerSOT-32 ..
SPP02N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP02N80C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
P-TO220-3-1
Maximum Ratings, at TC
= 25°C, unless otherwise specified
SPP02N80C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
SPP02N80C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP02N80C3Final data
Typical Transient Thermal Characteristics
SPP02N80C3Final data
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
50 SPP02N80C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
4 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJ
SPP02N80C3Final data
5 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
6 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0.5
1.5
2.5
3.5
4.5
5.5
7 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
8 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
11
15
(on)
