SPN02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeaturesV @ T 650 VDS j,max• New revolutionary high voltage technologyR 2.5ΩDS(on),max• Ultra low g ..
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SPN02N60C3
for lowest Conduction Losses & fastest Switching
technologies SPN02N60C3
CoolMOST'"l Power Transistor
Product Summary
Features
Vos @ Tj,max 650 V
. New revolutionary high voltage technology
R DS(on),max 2.5
. Ultra low gate charge ID 0.4
. Ultra low effective capacitances
. Extreme dv/dt rated
SOT223
Type Package Ordering Code Marking pm 1
SPN02N60C3 SOT223 Q67040-S4553 02N60C3 gn“gce
Maximum ratings, at Tj=25 ''C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID TA=25 "C 0.4 A
TA=70 "C 0.3
Pulsed drain current" ID,pulse TA=25 "C 5.4
Avalanche energy, single pulse EAS ID=0.9 A, VDD=50 V 50 mJ
Avalanche energy, repetitive tAR1)'2) EAR ID=1.8 A, VDD=50 v 0.07
Avalanche current, repetitive t ARI) IAR 1.8 A
. [0:1.8 A, VDS=480 V,
Drain source voltage slope dv/dt Tj=125 "C 50 V/ns
Gate source voltage VGS static +20 V
VGS AC (f>1 Hz) ur30
Power dissipation Ptot TA=25 'C 1 8 W
Operating and storage temperature Tj, Tstg -55 ... 150 "C
Rev. 2.2 page 1 2004-10-04
technologies SPN02N60C3
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resi.slance, junction - Rmus - 30 - K/W
soldering point
SMD version, device
RthJA on PCB, minimal - 110 -
Thermal resistance, junction - footprint
ambient SMD version, device
on PCB, 6 cm2 cooling - 70 -
areaz)
. 1.6 mm (0.063 in.) o
Soldering temperature Tm from case for 10 s - - 260 C
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(SR)oss b'ss=0 V, I D=250 pA 600 - - V
Avalanche breakdown voltage V(BR)DS Vss=0 V, ID=0.25 A - 700 -
Gate threshold voltage Vesan) VDS=VGS, ID=0.08 mA 2.1 3 3.9
V =600 V, V =0 V,
Zero gate voltage drain current l DSS [is 0 GS - 0.5 1 pA
Tj=25 C
Vos=600 V, VGS=0 V, 50
Tj=150 "C - -
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 100 nA
. . VGS=10V,/D=1.1A,
Drain-source on-state resistance Rosmn) - a - 2.0 2.5 Q
T,=25 C
V =1 V I =1.1 A
GS 0., , D , - 5.2 -
Tj=150 C
Gate resistance Rs f=1 MHz, open drain - 9 -
V >2 I R ,
Transconductance " I 33' I DI DS(on)max - 1.75 - S
1=1.1 A
Rev. 2.2 page 2 2004-10-04
