SPI08N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.65 ΩDS(on)• New revolutionary high voltage technologyI 8 AD• Ultra low gate chargeP-TO22 ..
SPI11N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPI11N60S5 ,for lowest Conduction LossesFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPI11N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 1 K/WThermal resistance, junction - ..
SPI12N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPI15N60CFD , CoolMOSTM Power Transistor Intrinsic fast-recovery body diode
SST89V52RD-33-C-PIE , FlashFlex51 MCU
SST89V54RD2-33-C-TQJ , FlashFlex51 MCU
SST89V54RD2-33-I-TQJE , FlashFlex51 MCU
SST89V554RC-33-C-NJ , FlashFlex51 MCU
SST89V554RC-33-I-NJ , FlashFlex51 MCU
SST89V554RC-33-I-PI , FlashFlex51 MCU
SPI08N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO262P-TO220-3-1
Maximum Ratings
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
120 SPP08N80C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
30
35
45
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
20
22
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
SPP08N80C3, SPI08N80C3
SPA08N80C3Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
2.5
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 5.1 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.6
SPP08N80C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
22
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 8 A pulsed
10
12
16 SPP08N80C3
