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Partno	Mfg	Dc	Qty	Available	Descript
SPD50P03L	Infineon	N/a	25200	avai	Low Voltage MOSFETs

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SPD50P03L
Low Voltage MOSFETs
Preliminary dataSPD50P03L
OptiMOS-P Power - TransistorProduct Summary
Feature
• P-Channel
• Enhancement mode
• Logic Level
• High current rating
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P-TO252-5-3
Preliminary dataSPD50P03L
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataSPD50P03L
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPD50P03L
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
160 SPD50P03L
tot
2 Drain currentD = f (TC)
parameter: |VGS|≥ 10 V
-5
-10
-15
-20
-25
-30
-35
-40
-45
-55
SPD50P03L
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C-10 -10 -10 -10
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-6 10
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
SPD50P03L
thJC
Preliminary dataSPD50P03L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
200
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.0025
0.005
0.0075
0.01
0.015
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
90
100
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
90
110
Preliminary dataSPD50P03L
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -50 A, VGS = -10 V
10
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -250 µA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T-10 -10 -10 -10
SPD50P03L

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