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Partno	Mfg	Dc	Qty	Available	Descript
SPD50N06S2L-13 |SPD50N06S2L13	INFINEON	N/a	30	avai	Low Voltage MOSFETs

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SPD50N06S2L-13
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 72A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
10
20
30
40
50
60
70
80
90
100
110
120
SPD50N06S2L-13
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
15
20
25
30
35
40
45
55
SPD50N06S2L-13
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPD50N06S2L-13
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD50N06S2L-13
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
90
100
120 SPD50N06S2L-13
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
12
16
20
24
28
32
36 SPD50N06S2L-13
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
100
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
80
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 34 A, VGS = 10 V
12
16
20
24
28
32
36 SPD50N06S2L-13
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPD50N06S2L-13

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