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Partno	Mfg	Dc	Qty	Available	Descript
SPD50N03S2L-06 |SPD50N03S2L06	INFINEON	N/a	90	avai	Low Voltage MOSFETs

SPD50N03S2L-06 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR 6.4 mWDS(on)· Enhancement modeI 50 AD· Logic LevelP- TO252 -3-11· High C ..
SPD50N03S2L-06G , N-Channel Enhancement mode Logic LevelExcellent Gate Charge x RDS(on) product (FOM)
SPD50N06S2-14 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 14.4 mWDS(on)· Enhancement modeI 50 AD· 175°C operating temperatureP- T ..
SPD50N06S2L-13 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPD50P03L ,Low Voltage MOSFETsFeatureV -30 VDS• P-ChannelR 7 mΩDS(on)• Enhancement modeI -50 AD• Logic LevelP-TO252-5-3• High cur ..
SPD6722QCCE , ISA-to-PC-Card (PCMCIA) Controllers
SST39WF400A-90-4I-B3K , 4 Mbit (x16) Multi-Purpose Flash
SST39WF400A-90-4I-B3KE , 4 Mbit (x16) Multi-Purpose Flash
SST39WF400A-90-4I-M1Q , 4 Mbit (x16) Multi-Purpose Flash
SST39WF400A-90-4I-M1QE , 4 Mbit (x16) Multi-Purpose Flash
SST39WF400A-90-4I-M1QE , 4 Mbit (x16) Multi-Purpose Flash
SST39WF800A-90-4C-M2QE , 8 Mbit (x16) Multi-Purpose Flash

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SPD50N03S2L-06
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· High Current Rating
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 113A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
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110
120
SPD50N03S2L-06
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
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15
20
25
30
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40
45
55
SPD50N03S2L-06
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD50N03S2L-06
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
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100
120 SPD50N03S2L-06
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS=10V
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12
14
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21 SPD50N03S2L-06
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
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45
50
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
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70
90
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
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11
12
SPD50N03S2L-06
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPD50N03S2L-06

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