SPD31N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance R 0.036 Ω• Enhancem ..
SPD35N10 ,Low Voltage MOSFETsCharacteristicsV 100 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS DGate threshold volt ..
SPD35N10 ,Low Voltage MOSFETsFeatureV100 VDS
SPD31N05
SIPMOS Power Transistor
Infineon
technologies
trnpro
S|PMOS® PowerTransistor
Features
q N channel
. Enhancement mode
q Avalanche rated
q dv/dt rated
q 175°C operating temperature
wed Rosion) . SPD 31N05
Product Summary
Drain source voltage VDS 55 V
Drain-Source on-state resistance RDS(on) 0.036 Q
Continuous drain current ID 31 A
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
SPD31N05 P-T0252 Q67040-S4121 Tape and Reel G D s
SPU31N05 P-TO251-3-1 Q67040-S4113-A2 Tube
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ''C 31
To = 100 ( 22
Pulsed drain current leuIse 124
TC = 25 'C
Avalanche energy, single pulse EAS 140 mJ
ID=31A, VDD=25V, RGS=25£2
Avalanche energy, periodic limited by Timax EAR 7.5
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 31A, VDS = 40 V, di/dt= 200 Alps,
Timax = 175 (
Gate source voltage VGS i20 V
Power dissipation Ptot 75 W
To = 25 ''C
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 2 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
© min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA, Ti = 25 (
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ho = 50 pA
Zero gate voltage drain current IDSS pA
VDS=50V,VGS=0V,TJ-=25°C - 0.1 1
1/Ds=50v,ves=0V,Tj=150''C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs-- 0V
Drain-Source on-state resistance RDS(0n) Q
VGS = 10 V, ho = 22 A - 0.03 0.036
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 06.99
