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Partno	Mfg	Dc	Qty	Available	Descript
SPD30N08S2L-21 |SPD30N08S2L21	Infineon	N/a	25200	avai	Low Voltage MOSFETs

SPD30N08S2L-21 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPD30P06P ,Low Voltage MOSFETsFeatureV -60 VDS• P-ChannelR 0.075 ΩDS(on)• Enhancement modeI -30 AD• 175°C operating temperatureP- ..
SPD31N05 ,SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance R 0.036 Ω• Enhancem ..
SPD35N10 ,Low Voltage MOSFETsCharacteristicsV 100 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS DGate threshold volt ..
SPD35N10 ,Low Voltage MOSFETsFeatureV100 VDS

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SPD30N08S2L-21
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 54A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
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SPD30N08S2L-21
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
12
16
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24
32 SPD30N08S2L-21
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0.01 , TC = 25 °C10 10 10 10
SPD30N08S2L-21
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
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55
60
SPD30N08S2L-21
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
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SPD30N08S2L-21
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
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25
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50
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
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50
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 25 A, VGS = 10 V
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80 SPD30N08S2L-21
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPD30N08S2L-21

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