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Partno	Mfg	Dc	Qty	Available	Descript
SPD30N03S2L-07 |SPD30N03S2L07	INFINEON	N/a	2000	avai	Low Voltage MOSFETs

SPD30N03S2L-07 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 6.7 mWDS(on)· Enhancement modeI 30 AD· Logic LevelP- TO252 -3-11· Excel ..
SPD30N03S2L-10 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR 10 mWDS(on)· Enhancement modeI 30 AD· Logic LevelP- TO252 -3-11· Low On- ..
SPD30N06S2-23 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 23 mWDS(on)· Enhancement modeI 30 AD· 175°C operating temperatureP- TO2 ..
SPD30N08S2-22 ,Low Voltage MOSFETsFeatureV75 VDS· N-ChannelR 21.5 mWDS(on)· Enhancement modeI 30 AD· 175°C operating temperatureP- TO ..
SPD30N08S2L-21 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPD30P06P ,Low Voltage MOSFETsFeatureV -60 VDS• P-ChannelR 0.075 ΩDS(on)• Enhancement modeI -30 AD• 175°C operating temperatureP- ..
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SST39WF1601-90-4C-MBQE , 16 Mbit (x16) Multi-Purpose Flash Plus

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SPD30N03S2L-07
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
10
20
30
40
50
60
70
80
90
100
110
120
SPD30N03S2L-07
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
12
16
20
24
32 SPD30N03S2L-07
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPD30N03S2L-07
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
55
60
SPD30N03S2L-07
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
10
12
14
16
18
20
24 SPD30N03S2L-07
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
90
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
10
12
16 SPD30N03S2L-07
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPD30N03S2L-07

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