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Partno	Mfg	Dc	Qty	Available	Descript
SPD15N06S2L-64 \|SPD15N06S2L64	IN	N/a	10000	avai	Low Voltage MOSFETs
SPD15N06S2L-64 \|SPD15N06S2L64	Infineon	N/a	1560	avai	Low Voltage MOSFETs

SPD15N06S2L-64 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 64 mWDS(on)· Enhancement modeI 19 AD· Logic LevelP- TO252 -3-11· 175°C o ..
SPD15N06S2L-64 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPD18P06P ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD22N08S2L-50 ,Low Voltage MOSFETsFeatureV 75 VDS· N-ChannelR 50 mWDS(on)· Enhancement modeI 25 AD· Logic LevelP- TO252 -3-11· 175°C ..
SPD23N05 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
SPD28N03 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39WF1601-70-4C-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-70-4C-MBQE , 16 Mbit (x16) Multi-Purpose Flash Plus

SPD15N06S2L-64
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
10
15
20
25
30
35
40
45
55
SPD15N06S2L-64
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
12
14
16
20 SPD15N06S2L-64
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 10 10 10 10
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs0.511.522.533.54
10
15
20
25
30
35
40
50 SPD15N06S2L-64
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
20
40
60
80
100
120
140
160
180 SPD15N06S2L-64
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
20
30
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
12
14
18
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 8 A, VGS = 10 V
20
40
60
80
100
120
140
160
180 SPD15N06S2L-64
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
-1 10 10 10 10
SPD15N06S2L-64

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