SPD14N06S2-80 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › S › S87 > SPD14N06S2-80,Low Voltage MOSFETs

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
SPD14N06S2-80 \|SPD14N06S280	INFINEON	N/a	4679	avai	Low Voltage MOSFETs

SPD14N06S2-80 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 80 mWDS(on)· Enhancement modeI 17 AD· 175°C operating temperatureP- TO25 ..
SPD15N06S2L-64 ,Low Voltage MOSFETsFeatureV55 VDS· N-ChannelR 64 mWDS(on)· Enhancement modeI 19 AD· Logic LevelP- TO252 -3-11· 175°C o ..
SPD15N06S2L-64 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPD18P06P ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD22N08S2L-50 ,Low Voltage MOSFETsFeatureV 75 VDS· N-ChannelR 50 mWDS(on)· Enhancement modeI 25 AD· Logic LevelP- TO252 -3-11· 175°C ..
SPD23N05 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-90-4I-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39WF1601-70-4C-B3KE , 16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601-70-4C-MBQE , 16 Mbit (x16) Multi-Purpose Flash Plus

SPD14N06S2-80
Low Voltage MOSFETs
SPD14N06S2-80
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO252 -3-11
SPD14N06S2-80
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Defined by design. Not subject to production test.
SPD14N06S2-80
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPD14N06S2-80
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 6 V
12
16
20
24
32 SPD14N06S2-80
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
12
14
18
SPD14N06S2-80
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 10 10 10 10
SPD14N06S2-80
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
35
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS681012141618202440
60
80
100
120
140
160
180
220
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
12
14
16
18
20
22
24
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
11
SPD14N06S2-80
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
20
40
60
80
100
120
140
160
180
200
220
240
SPD14N06S2-80
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
-1 10 10 10 10
SPD14N06S2-80

TEL:86-533-2716050 FAX:86-533-2716790