SPD09N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD09N05-SPU09N05
N-Channel SIPMOS Power Transistor
( Infineon
technologies
S|PMOS® PowerTransistor
Features
o N channel
. Enhancement mode
o Avalanche rated
wed Ramon) . SPD 09N05
trnpro
Product Summary
Drain source voltage VDS 55 V
Drain-Source on-state resistance RDSWD 0.1 f2
Continuous drain current ID 9.2 A
o d v/dt rated
. 175°C operating temperature
VPTOQOSO
VPT09051
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
SPD09N05 P-T0252 Q67040-S4136 Tape and Reel G D S
SPU09N05 P-TO251 Q67040-S4130-A2 Tube
MaximumRatings , at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ho A
TC = 25 ''C 9.2
To = 100 ( 6.5
Pulsed drain current IDpuIse 37
To = 25 "C
Avalanche energy, single pulse EAs 35 mJ
ho = 9.2 A, VDD = 25 V, RGS = 25 Q
Avalanche energy, periodic limited by ijax EAR 2.4
Reverse diode dv/dt dv/dt 6 kV/ps
hi; = 9.2 A, VDS = 40 V, di/dt= 200 Alps
Gate source voltage VGS i20 V
Power dissipation Ptot 24 W
To = 25 ''C
Operating and storage temperature Ti' , Tstg -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon SPD 09N05
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 6.25 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)Dss 55 - - V
VGS = O V, ho = 0.25 mA
Gate threshold voltage, VGS = VDS Vegan) 2.1 3 4
ID = 10 pA
Zero gate voltage drain current bss pA
VDS=50V,VGS=0V,TJ-=25°C - 0.1 1
VDS=50V, VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(0n) Q
VGS = 10 V, ID = 6.5 A - 0.093 0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 06.99
