SPD08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD09N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD08P06P
P-Channel SIPMOS Power Transistor
SPD08P06P
SPU08P06PPreliminary data
SIPMOS Power-Transistor
Features P-Channel Enhancement mode Avalanche rated dv/dt rated175°C operating temperature
Product Summary
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
SPD08P06P
SPU08P06PPreliminary data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SPD08P06P
SPU08P06PPreliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
SPD08P06P
SPU08P06PPreliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
SPD08P06P
SPU08P06PPreliminary data
Drain currentD = f (TC)
parameter: V‡ 10 V
-1
-2
-3
-4
-5
-6
-7
-8
-10
Power dissipationtot = f (TC)
10
15
20
25
30
35
40
50
tot
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 -10 -10 -10 -10
SPD08P06P
SPU08P06PPreliminary data
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
DS(on)
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: t= 80 μs
-2
-4
-6
-8
-10
-12
-14
-16
-18
-21
Typ. transfer characteristics ID= f ( VGS )DS‡ 2 x ID x RDS(on)max
parameter: tp = 80 μs
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
