SPD08N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.3R Ω• Enhanceme ..
SPD08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Worldwide best R in TO-252 ..
SPD08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPD09N05 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD09P06PL ,Low Voltage MOSFETsFeatureV-60 VDS
SPD08N10
N-Channel SIPMOS Power Transistor
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 08N10
technologies
Preliminary Data
S|PMOS® Power Transistor
Features Product Summary
q N channel Drain source voltage VDS 100 V
q Enhancement mode Drain-Source on-state resistance RDS(0n) 0.3 f2
. Avalanche rated Continuous drain current ID 8.4 A
. dv/dt rated
VP109051
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD08N10 P-T0252 Q67040-S4126 Tape and Reel G D S
SPU08N10 P-T0251 Q67040-S4118-A2 Tube
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
To = 25 ( 8.4
TC = 100 ( 5.4
Pulsed drain current IDpuIse 33.6
Tc = 25 (
Avalanche energy, single pulse EAS 3O mJ
ho = 8.4 A, VDD = 25 V, Rss = 25 Q
Avalanche energy, periodic limited by ijax EAR
Reverse diode dv/dt dv/dt kV/ps
ls = 8.4 A, VDS = 80 V, dildt= 200 Alps
Gate source voltage VGS i20 V
Power dissipation Ptot 40 W
Tc = 25 (
Operating and storage temperature T' , Tstg -55... +175 (
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
(Cl,":,!,:,:!,]:!.,,!,,,,,,,,,-,, SPD 08N10
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 3.1 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
© min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 100 - - V
VGS = O V, ho = 0.25 mA
Gate threshold voltage, VGS = VDS Vgsah) 2.1 3 4
ID = 1 mA
Zero gate voltage drain current IDSS pA
VDS=100V, VGS=0V, Ti=25''C - 0.1 1
Vros=100V, VGS=OV, Ti=125''C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, bbs-- 0V
Drain-Source on-state resistance RDS(on) Q
VGS = 10 V, ID = 5.4 A - 0.25 0.3
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
