SPD06N60C3 ,for lowest Conduction Losses & fastest SwitchingFeaturesV @ T 650 VDS j,max• New revolutionary high voltage technologyR 0.75ΩDS(on),max• Ultra low ..
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SPD07N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyVV 600DS• Worldwide best R in TO-2 ..
SPD07N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO-251 ..
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SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3KE-T , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD06N60C3
for lowest Conduction Losses & fastest Switching
CP""''"
Infineon
lechnologies
CooIMOSTM Power Transistor
Features
. New revolutionary high voltage technology
. Ultra low gate charge
. Periodic avalanche rated
. High peak current capability
. Ultra low effective capacitances
. Extreme dv/dt rated
. Improved transconductance
SPD06N60C3
Product Summary
VDS @ Tj,max 650 V
RDS(on),max 0.75
P-T0252-3-1
Type Package Ordering Code Marking pln 1
SPD06N60C3 P-T0252-3-1 Q67040-S4630 06N60C3 :31qu
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current In Tc=25 ''C 6.2 A
Tc=100 °C 3.9
Pulsed drain current" lD.pulse Tc=25 ''C 18.6
Avalanche energy, single pulse EAS ID=3.1 A, VDD=50 V 200 mJ
Avalanche energy, repetitive tAR1)'2) E AR ID=6.2 A, VDD=50 V 0.5
Avalanche current, repetitive t ARI) IAR 6.2 A
. ID=6.2 A, VDS=480 V,
Drain source voltage slope dv/dt Tj=125 "C 50 V/ns
Gate source voltage VGS static :20 V
VGS AC (f>1 Hz) E30
Power dissipation Ptot TC=25 ''C 74 W
Operating and storage temperature Ts, Tsta -55 . 150 'C
Rev. 1.0 page 1 2004-04-27
CP""''"
Infineon
lechnologies
SPD06N60C3
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.7 K/W
SMD version, device
RmJA on PCB, minimal - - 75
Thermal resistance, junction - footprint
ambient SMD version, device
on PCB, 6 cm2 cooling - 50 -
area3)
. 1.6 mm (0.063 in.) o
Soldering temperature Tsold from case for 10 s - - 260 C
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS b'ss=0 V, I D=250 pA 600 - - V
Avalanche breakdown voltage V(BR)DS Vss--0 V, ho--6.2 A - 700 -
Gate threshold voltage Vegan) VDS=VGS, ID=0.26 mA 2.1 3 3.9
V =600 V, V =0 V,
Zero gate voltage drain current I DSS T382 0 GS - 0.1 1 pA
j" 5 C
Vos=600 V, VGS=0 V,
Tj=150 "C - - 100
Gate-source leakage current less VGs=20 V, VDs=0 V - - 100 nA
V =10V,l =3.9 A,
Drain-source on-state resistance RDS(on) TESZ o D - 0.68 0.75 9
j- 5 C
VGS=10 V, ID=3.9 A,
Tj=150 "C - 1.82 -
Gate resistance RG f=1 MHz, open drain - 1 -
IVDS|>2|lD|RDS(on)maXs
Transconductance - 5.6 - S
" 10:3.9 A
Rev. 1.0 page 2 2004-04-27
