SPD03N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPD03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPD03N60S5 ,for lowest Conduction LossesFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPD04N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPD04N60S5 ,for lowest Conduction LossesFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPD04N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 1.3 ΩDS(on)• New revolutionary high voltage technologyI 4 AD• Ultra low gate chargeP-TO252 ..
SST39VF800A-70-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD03N60C3
for lowest Conduction Losses & fastest Switching
SPD03N60C3
SPU03N60C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Maximum Ratings
SPD03N60C3
SPU03N60C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPD03N60C3
SPU03N60C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPD03N60C3
SPU03N60C3Final data
Typical Transient Thermal Characteristics
SPD03N60C3
SPU03N60C3Final data
1 Power dissipationtot = f (TC)
12
16
20
24
28
32
40 SPD03N60C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
11
SPD03N60C3
SPU03N60C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2 A, VGS = 10 VSPD03N60C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
11
