SPD02N60 ,SIPMO Power TransistorSPD02N60SPU02N60Preliminary data®SIPMOS Power Transistor• N-Channel• Enhancement mode• Avalanche ra ..
SPD02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO251 ..
SPD02N60S5 ,for lowest Conduction LossesFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO252 ..
SPD02N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 1.4 - Sfs DS D DS(on)maxI =1.1ADInput capacitance C ..
SPD02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 2.7 ΩDS(on)• New revolutionary high voltage technologyI 2 AD• Ultra low gate chargeP-TO252 ..
SPD03N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SST39VF800-70-4C-BK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-90-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800A-70-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD02N60
SIPMO Power Transistor
SPD02N60
SPU02N60Preliminary data
Pin 2Pin 3Pin 1DS
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
SPD02N60
SPU02N60Preliminary data
Electrical Characteristics
Thermal Characteristics
Static CharacteristicsSPD02N60
SPU02N60Preliminary data
Electrical Characteristics
Dynamic Characteristics
SPD02N60
SPU02N60Preliminary data
Electrical Characteristics
Reverse Diode
SPD02N60
SPU02N60Preliminary data
Drain currentD = f (TC)
parameter: VGS≥ 10 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.4
Power Dissipationtot = f (TC)
10
15
20
25
30
35
40
45
50
60
tot
Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3
-2 10
-1 10 10 10
Transient thermal impedancethJC = f(tp)
parameter : D = tp/T
10 0
-3 10
-2 10
-1 10 10 10
thJC
SPD02N60
SPU02N60Preliminary data
Typ. output characteristicsD = f (VDS)
parameter: tp = 80 μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
Drain-source on-resistanceDS(on) = f (Tj)
parameter : ID = 1.3 A, VGS = 10 V
10
12
14
16
18
20
22
DS(on)
