SPD01N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 6 ΩDS(on)• New revolutionary high voltage technologyI 0.8 AD• Ultra low gate chargeP-TO252 ..
SPD02N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO252 ..
SPD02N60 ,SIPMO Power TransistorSPD02N60SPU02N60Preliminary data®SIPMOS Power Transistor• N-Channel• Enhancement mode• Avalanche ra ..
SPD02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO251 ..
SPD02N60S5 ,for lowest Conduction LossesFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO252 ..
SPD02N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 1.4 - Sfs DS D DS(on)maxI =1.1ADInput capacitance C ..
SST39VF800-70-4C-BK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-70-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800-90-4C-EK , 8 Megabit (512K x 16-Bit) Multi-Purpose Flash
SST39VF800A-70-4C-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD01N60C3
for lowest Conduction Losses & fastest Switching
SPU01N60C3
SPD01N60C3Rev. 2.0
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPU01N60C3
SPD01N60C3Rev. 2.0
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPU01N60C3
SPD01N60C3Rev. 2.0
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
SPU01N60C3
SPD01N60C3Rev. 2.0
Typical Transient Thermal Characteristics
SPU01N60C3
SPD01N60C3Rev. 2.0
1 Power dissipationtot = f (TC)
10
12 SPU01N60C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-2 10
-1 10 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0.5
1.5
2.5
SPU01N60C3
SPD01N60C3Rev. 2.0
5 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
12
16
20
24
28
34 SPU01N60C3
DS(on)
6 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0.5
1.5
2.5
7 Typ. gate chargeGS = f (QGate)
parameter: ID = 0.8 A pulsed
10
12
16 SPU01N60C3
8 Forward characteristics of body diodeF = f (VSD)
parameter: T
-2 10
-1 10 10 10
SPU01N60C3
