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Partno	Mfg	Dc	Qty	Available	Descript
SPB80N06S2L-H5 |SPB80N06S2LH5	Infineon	N/a	4800	avai	OptiMOS Power-Transistor

SPB80N06S2L-H5 ,OptiMOS Power-TransistorCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPB80N08S2-07 ,OptiMOS Power-TransistorFeatureV75 VDS· N-ChannelR max. SMD version 7.1 mWDS(on)· Enhancement modeI 80 AD· 175°C operating ..
SPB80N08S2L07 ,OptiMOS Power-TransistorCharacteristicsV 75 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SPB80N08S2L-07 ,OptiMOS Power-TransistorFeatureV75 VDS· N-ChannelR max. SMD version 6.8 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- TO ..
SPB80N10L ,Low Voltage MOSFETsFeatureV100 VDS

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SPB80N06S2L-H5
OptiMOS Power-Transistor
SPB80N06S2L-H5
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· 175°C operating temperature
· dv/dt ratedP- TO263 -3-2P- TO220 -3-1
SPB80N06S2L-H5
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 170A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
SPB80N06S2L-H5
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPB80N06S2L-H5
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
40
80
120
160
200
240
320 SPP80N06S2L-H5
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90 SPP80N06S2L-H5
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N06S2L-H5
SPB80N06S2L-H5
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190 SPP80N06S2L-H5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
10
12
16 SPP80N06S2L-H5
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
140
160
200
SPB80N06S2L-H5
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
10
12
14
17 SPP80N06S2L-H5
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPP80N06S2L-H5

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