SPB80N06S2-07 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPB80N06S2-07
N-Channel OptiMOS Power Transistor
SPP80N06S2-07
SPB80N06S2-07Preliminary data
OptiMOS-
=Power-Transistor
Product Summary
Feature N-Channel Enhancement mode175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1
SPP80N06S2-07
SPB80N06S2-07Preliminary data
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire; with a RthJC = 0.6 K/W the chip is able to carry ID = 135A
and calculated with max. source pin temperature of 85°C.
SPP80N06S2-07
SPB80N06S2-07Preliminary data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPP80N06S2-07
SPB80N06S2-07Preliminary data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
220
240
SPP80N06S2-07
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
20
30
40
50
60
70
90 SPP80N06S2-07
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N06S2-07
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP80N06S2-07
thJC
SPP80N06S2-07
SPB80N06S2-07Preliminary data
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs1234
20
40
60
80
100
120
140
160
190 SPP80N06S2-07
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
12
14
16
18 SPP80N06S2-07
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
80
90
100
SPP80N06S2-07
SPB80N06S2-07Preliminary data
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 68 A, VGS = 10 V
10
12
14
16
18
20 SPP80N06S2-07
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP80N06S2-07
