SPB80N06S2-05 ,N-Channel OptiMOS Power TransistorFeaturesProduct Summary• N-Channel Drain source voltage 55 VVDS• Enhancement modeDrain-source on-st ..
SPB80N06S2-07 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPB80N06S2-05
N-Channel OptiMOS Power Transistor
SPP80N06S2-05
SPB80N06S2-05Preliminary data
OptiMOS=
=Power-Transistor
Features• N-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
•=175°C operating temperature
Product Summary
SPP80N06S2-05
SPB80N06S2-05Preliminary data
Thermal Characteristics
Characteristics
Static Characteristics
SPP80N06S2-05
SPB80N06S2-05Preliminary data
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPP80N06S2-05
SPB80N06S2-05Preliminary data
Power dissipationtot = f (TC)
40
80
120
160
200
240
320
tot
Drain currentD = f (TC)
parameter: VGS≥ 10 V
10
20
30
40
50
60
70
90
Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
thJC
SPP80N06S2-05
SPB80N06S2-05Preliminary data
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: VGS
10
12
14
17
DS(on)
Typ. transfer characteristics ID= f ( VGS )DS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
140
170
SPP80N06S2-05
SPB80N06S2-05Preliminary data
Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 40 A, VGS = 10 V
10
12
14
17
DS(on)
Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = 250 µA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
GS(th)
Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
Forward characteristics of reverse diodeF = f (VSD)
parameter: T , tp = 80 µs10 10 10 10
