SPB80N04S2-04 ,OptiMOS Power-TransistorFeatureV40 VDS• N-ChannelR max. SMD version 3.4 mΩDS(on)• Enhancement modeI 80 AD• 175°C operating ..
SPB80N04S2L-03 ,OptiMOS Power-TransistorCharacteristics40 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SPB80N06S2-05 ,N-Channel OptiMOS Power TransistorFeaturesProduct Summary• N-Channel Drain source voltage 55 VVDS• Enhancement modeDrain-source on-st ..
SPB80N06S2-07 ,N-Channel OptiMOS Power TransistorFeatureV55 VDS
SPB80N04S2-04
OptiMOS Power-Transistor
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
OptiMOS Power-Transistor
Product Summary
Feature• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO263 -3-2P- TO262 -3-1P- TO220 -3-1
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 208A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
1 Power dissipationtot = f (TC)
parameter: VGS≥ 6 V
40
80
120
160
200
240
320 SPP80N04S2-04
tot
2 Drain currentD = f (TC)
parameter: VGS≥ 10 V
10
20
30
40
50
60
70
90 SPP80N04S2-04
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP80N04S2-04
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP80N04S2-04
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190 SPP80N04S2-04
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
11
13
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
40
80
120
160
200
240
320
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
160
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
11
SPP80N04S2-04
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP80N04S2-04
