SPB80N03 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.006R Ω• Enhanceme ..
SPB80N03L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS DGate thresho ..
SPB80N03S2-03 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR max. SMD version 3.1 mWDS(on)· Enhancement modeI 80 AD· Excellent Gate C ..
SPB80N03S2L-03 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR max. SMD version 2.8 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- TO ..
SPB80N03S2L-04 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR max. SMD version 3.9 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- T ..
SPB80N03S2L-05 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 5.2 mWDS(on)· Enhancement modeI 80 AD· Logic LevelP- TO262 -3-1 P- TO26 ..
SST39SF040-70-4C-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-WH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4I-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF512-70-4C-NHE , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SPB80N03
N-Channel SIPMOS Power Transistor
SPP80N03
SIPMOS Power Transistor
Product Summary
Features• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
Pin 1Pin 2Pin 3DS
SPP80N03
Thermal Characteristics
Characteristics
Static Characteristicscurrent limited by bond wire Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
SPP80N03
Dynamic Characteristics
SPP80N03
Dynamic Characteristics
Reverse Diode
SPP80N03
Power Dissipationtot = f (TC)
40
80
120
160
200
240
320
tot
Drain currentD = f (TC)
parameter: VGS ≥ 10 V
10
20
30
40
50
60
70
90
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
thJC
Safe operating areaD = f (VDS)
parameter : D = 0 , TC = 25 °C10 10 10
SPP80N03
Typ. output characteristicsD = f (VDS)
parameter: tp = 80 μs
20
40
60
80
100
120
140
160
190
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: VGS
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.019
DS(on)
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 μsDS ≥ 2 x ID x RDS(on) max
10
15
20
25
30
35
40
45
50
55
60
70
Typ. forward transconductancefs = f(ID); Tj = 25°C
parameter: gfs
10
20
30
40
50
60
70
85
