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Partno	Mfg	Dc	Qty	Available	Descript
SPB47N10L	SIEMENS	N/a	39	avai	Low Voltage MOSFETs

SPB47N10L ,Low Voltage MOSFETsFeatureV100 VDS

SPB47N10L
Low Voltage MOSFETs
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
SIPMOS
=Power-TransistorProduct Summary
Feature N-Channel Enhancement mode Logic Level175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
190 SPP47N10L
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
15
20
25
30
35
40
45
55
SPP47N10L
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP47N10L
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
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90
100
120
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
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50
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90
100
110 SPP47N10L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
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60
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
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60
Preliminary dataSPI47N10L
SPP47N10L,SPB47N10L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 33 A, VGS = 4.5 V
20
40
60
80
100
120
140
170 SPP47N10L
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = 2 mA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP47N10L

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