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Partno	Mfg	Dc	Qty	Available	Descript
SPB47N10	infineon	N/a	9	avai	Low Voltage MOSFETs

SPB47N10 ,Low Voltage MOSFETsFeatureV100 VDS

SPB47N10
Low Voltage MOSFETs
Preliminary dataSPI47N10
SPP47N10,SPB47N10
SIPMOS
=Power-TransistorProduct Summary
Feature N-Channel Enhancement mode175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
Preliminary dataSPI47N10
SPP47N10,SPB47N10
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataSPI47N10
SPP47N10,SPB47N10
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPI47N10
SPP47N10,SPB47N10
1 Power dissipationtot = f (TC)
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60
80
100
120
140
160
190 SPP47N10
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
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45
55
SPP47N10
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP47N10
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Preliminary dataSPI47N10
SPP47N10,SPB47N10
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs123456
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120 SPP47N10
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
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on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
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8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
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35
Preliminary dataSPI47N10
SPP47N10,SPB47N10
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 33 A, VGS = 10 V
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110 SPP47N10
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = 2 mA
0.4
0.8
1.2
1.6
2.4
2.8
3.2
3.6
4.4
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP47N10

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