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Partno	Mfg	Dc	Qty	Available	Descript
SPB42N03S2L-13 \|SPB42N03S2L13	Infineon	N/a	4800	avai	Low Voltage MOSFETs

SPB42N03S2L-13 ,Low Voltage MOSFETsFeatureV 30 VDS· N-ChannelR 12.9 mWDS(on)· Enhancement modeI 42 AD· Logic LevelP- TO262 -3-1 P- TO2 ..
SPB46N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
SPB47N10 ,Low Voltage MOSFETsFeatureV100 VDS

SPB42N03S2L-13
Low Voltage MOSFETs
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on)
product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -3-2P- TO262 -3-1P- TO220 -3-1
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
Thermal Characteristics
Characteristics
Static Characteristics
1Current limited by bondwire ; with an RthJC = 1.8K/W the chip is able to carry ID= 64A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
10
20
30
40
50
60
70
80
100
SPP42N03S2L-13
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
15
20
25
30
35
40
50
SPP42N03S2L-13
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP42N03S2L-13
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
90
110
SPP42N03S2L-13
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
12
16
20
24
28
32
40
SPP42N03S2L-13
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
100
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
50
SPI42N03S2L-13
SPP42N03S2L-13,SPB42N03S2L-13
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 21 A, VGS = 10 V
10
12
14
16
18
20
22
24
SPP42N03S2L-13
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60-2020601001800
0.5
1.5
2.5
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPP42N03S2L-13

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