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Partno	Mfg	Dc	Qty	Available	Descript
SPB160N04S2L-03 |SPB160N04S2L03	INFINEON	N/a	25100	avai	Low Voltage MOSFETs

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SPB160N04S2L-03
Low Voltage MOSFETs
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· High Current Rating
· Low On-Resistance RDS(on)
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -7-3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 243A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
40
80
120
160
200
240
320 SPB160N04S2L-03
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
20
40
60
80
100
120
140
170 SPB160N04S2L-03
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPB160N04S2L-03
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPB160N04S2L-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
40
80
120
160
200
240
280
320
380 SPB160N04S2L-03
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
10 SPB160N04S2L-03
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
200
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
140
160
180
200
220
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
-60SPB160N04S2L-03
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.4
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPB160N04S2L-03

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