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SPB10N10L,Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LL
SPB10N10L ,Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LLFeatureV100 VDS
SPB10N10L
Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LL
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
SIPMOS Power-Transistor
Product Summary
Feature N-Channel Enhancement mode Logic Level175°C operating temperature Avalanche rated dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
55
SPP10N10L
tot
2 Drain currentD = f (TC)
parameter: VGS 10 V
10
12 SPP10N10L
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C
-1 10 10 10 10
4 Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
25
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
50
100
150
200
250
300
350
400
500
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
12
16
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
Preliminary dataSPI10N10L
SPP10N10L,SPB10N10L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 8.1 A, VGS = 10 V
50
100
150
200
250
300
350
400
450
500
550
600
SPP10N10L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.8
1.2
1.4
1.6
1.8
2.4
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
SPP10N10L
