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Partno	Mfg	Dc	Qty	Available	Descript
SPB100N04S2L-03 |SPB100N04S2L03	Infineon	N/a	4800	avai	OptiMOS Power-Transistor

SPB100N04S2L-03 ,OptiMOS Power-TransistorCharacteristicsV 40 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SPB100N06S2-05 ,OptiMOS Power-TransistorFeatureV55 VDS· N-ChannelR max. SMD version 4.7 mWDS(on)· Enhancement modeI 100 AD· 175°C operating ..
SPB100N08S2-07 ,OptiMOS Power-TransistorFeatureV75 VDS· N-ChannelR max. SMD version 6.8 mWDS(on)· Enhancement modeI 100 AD· 175°C operating ..
SPB100N08S2L-07 ,OptiMOS Power-TransistorCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPB10N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 180 mΩDS(on)• Enhancement modeI 10.3 AD•=175°C operating temperatureP- ..
SPB10N10L ,Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LLFeatureV100 VDS

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SPB100N04S2L-03
OptiMOS Power-Transistor
OptiMOSâ Power-Transistor
Product Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -3-2P- TO220 -3-1
Thermal Characteristics
Characteristics
Static Characteristics
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 220A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TC)
parameter: VGS³ 4 V
40
80
120
160
200
240
320 SPP100N04S2L-03
tot
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
80
90
110
SPP100N04S2L-03
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
SPP100N04S2L-03
thJC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
SPP100N04S2L-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
180
200
240 SPP100N04S2L-03
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
11
SPP100N04S2L-03
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
200
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
140
160
180
200
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
10 SPP100N04S2L-03
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
SPP100N04S2L-03

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