SPB07N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 4 - Sfs DS D DS(on)maxI =4.6ADInput capacitance C V ..
SPB08P06P ,SIPMOS® Parametric SearchFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPB100N03S2-03 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR max. SMD version 3 mWDS(on)· Enhancement modeI 100 AD· Excellent Gate Ch ..
SPB100N03S2L-03 ,Low Voltage MOSFETsFeatureV30 VDS· N-ChannelR max. SMD version 2.7 mWDS(on)· Enhancement modeI 100 AD· Logic LevelP- T ..
SPB100N04S2-04 ,OptiMOS Power-TransistorFeatureV40 VDS· N-ChannelR max. SMD version 3.3 mWDS(on)· Enhancement modeI 100 AD· 175°C operating ..
SPB100N04S2L-03 ,OptiMOS Power-TransistorCharacteristicsV 40 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
SST39SF020-70-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-70-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-N , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020A , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPB07N60S5-SPP07N60S5
for lowest Conduction Losses
SPP07N60S5, SPB07N60S5
SPI07N60S5
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPP07N60S5, SPB07N60S5
SPI07N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPP07N60S5, SPB07N60S5
SPI07N60S5
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP07N60S5, SPB07N60S5
SPI07N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPP07N60S5, SPB07N60S5
SPI07N60S5
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPP07N60S5
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
25
4 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
12
SPP07N60S5, SPB07N60S5
SPI07N60S5
5 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
DS(on)
6 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.4 SPP07N60S5
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
8 Typ. gate chargeGS = f (QGate)
parameter: ID = 7.3 A pulsed
10
12
16 SPP07N60S5
