SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SST39SF010A-70-4C-PHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A-70-4C-WHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A-70-4I-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020-70-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-70-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-N , 2 Megabit (256K x 8) Multi-Purpose Flash
SPB02N60C3
for lowest Conduction Losses & fastest Switching
SPP02N60C3
SPB02N60C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Maximum Ratings
SPP02N60C3
SPB02N60C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPP02N60C3
SPB02N60C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP02N60C3
SPB02N60C3Final data
Typical Transient Thermal Characteristics
SPP02N60C3
SPB02N60C3Final data
1 Power dissipationtot = f (TC)
10
12
14
16
18
20
22
24
SPP02N60C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0.5
1.5
2.5
3.5
4.5
5.5
SPP02N60C3
SPB02N60C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
12
14
16
20
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
10
12
14
17 SPP02N60C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0.5
1.5
2.5
3.5
4.5
5.5
