SPA21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 0.6 K/WThermal resistance, junction ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SST39LF400A-45-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF400A-55-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF800A-55-4C-B3KE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF800A-55-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39SF010 , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF010-90-4C-WH , 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SPA21N50C3-SPB21N50C3-SPI21N50C3-SPP21N50C3
for lowest Conduction Losses & fastest Switching
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1P-TO220-3-31
Maximum Ratings
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
Maximum Ratings
Thermal Characteristics
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPP21N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
50
70
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
40
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.6
0.9
1.5
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1 SPP21N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
50
70
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 21 A pulsed
10
12
16 SPP21N50C3
