SPA20N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPA20N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 0.6 K/WThermal resistance, junction ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SST39LF040-45-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-70-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF080-55-4C-EI , 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF100-45-4C-WI , 1 Mbit (64K x16) Multi-Purpose Flash
SST39LF400A-45-4C-EK , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPA20N60C3 -SPB20N60C3-SPI20N60C3-SPP20N60C3 -SPP20N60C3.
for lowest Conduction Losses & fastest Switching
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)P-TO220-3-31
Maximum Ratings
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Maximum Ratings
Thermal Characteristics
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPP20N60C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
50
60
80
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
35
45
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPP20N60C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
50
60
80
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 20.7 A pulsed
10
12
16 SPP20N60C3
