SPA16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
SPA17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.29 ΩDS(on)• New revolutionary high voltage technologyI 17 AD• Worldwide best R in TO 220 ..
SPA20N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPA20N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA21N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 0.6 K/WThermal resistance, junction ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SST39LF020-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-NHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA16N50C3-SPI16N50C3
for lowest Conduction Losses & fastest Switching
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)P-TO220-3-31
Maximum Ratings
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at T=25°C unless otherwise specified
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
170 SPP16N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
12
16
20
24
28
36
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
60
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.8
1.2
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 10 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.6 SPP16N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
25
30
35
40
45
50
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 16 A pulsed
10
12
16 SPP16N50C3
