SPP15N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 15 AD• Ultra low gate chargeP-TO2 ..
SPP16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
SPP17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP18P06P ,P-Channel SIPMOS Power TransistorCharacteristicsThermal resistance, junction - case R - - 1.85 K/WthJC Thermal resistance, junction ..
SPP18P06P ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V -60 - - V(BR)DSSV = 0 V, I = -250 μAGS DGate thres ..
SPP18P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART
SPA15N60C3 -SPP15N60C3
for lowest Conduction Losses & fastest Switching
SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO262-3-1P-TO220-3-1
Maximum Ratings
SPP15N60C3, SPI15N60C3
SPA15N60C3
Maximum Ratings
Thermal Characteristics
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP15N60C3, SPI15N60C3
SPA15N60C3
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
170 SPP15N60C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP15N60C3, SPI15N60C3
SPA15N60C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
60
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
30
SPP15N60C3, SPI15N60C3
SPA15N60C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.6
0.8
1.2
1.4
1.8
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 9.4 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.6 SPP15N60C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
60
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 15 A pulsed
10
12
16 SPP15N60C3
