SPA11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA12N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11.6 AD• Ultra low gate chargeP-T ..
SPA15N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA15N65C3 , CoolMOS Power Transistor
SPA16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
SPA17N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.29 ΩDS(on)• New revolutionary high voltage technologyI 17 AD• Worldwide best R in TO 220 ..
SST39LF020-45-4C-MM , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-NHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA11N80C3 -SPP11N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP11N80C3
SPA11N80C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP11N80C3
SPA11N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP11N80C3
SPA11N80C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP11N80C3
SPA11N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP11N80C3
SPA11N80C3Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
170 SPP11N80C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
30
35
45
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP11N80C3
SPA11N80C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
