SPA11N65C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA11N65C3. ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPA11N65C3.. ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPA11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA12N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11.6 AD• Ultra low gate chargeP-T ..
SPA15N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SST39LF020 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MM , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-NHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA11N65C3 -SPA11N65C3.-SPA11N65C3..-SPI11N65C3
for lowest Conduction Losses & fastest Switching
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO262-3-1P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP11N65C3, SPA11N65C3
SPI11N65C3
Maximum Ratings
Thermal Characteristics
SPP11N65C3, SPA11N65C3
SPI11N65C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowHTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
according to JEDEC A108, MIL-STD 750/1038-1040, 1042Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
SPP11N65C3, SPA11N65C3
SPI11N65C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP11N65C3, SPA11N65C3
SPI11N65C3
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N65C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP11N65C3, SPA11N65C3
SPI11N65C3
5 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
20
24
28
32
40
7 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
8 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.6
0.8
1.2
1.4
1.6
(on)
SPP11N65C3, SPA11N65C3
SPI11N65C3
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP11N65C3
DS(on)
10 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
28
32
40
12 Forward characteristics of body diodeF = f (VSD)
parameter: T
-1 10 10 10 10
SPP11N65C3
11 Typ. gate chargeGS = f (QGate)
parameter: ID = 11 A pulsed
10
12
16 SPP11N65C3
