SPB11N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPB11N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 6 - Sfs DS D DS(on)maxI =7ADInput capacitance C V = ..
SPB12N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Values Unitmin. typ. max.R - - 1 K/WThermal resistance, junction - ..
SPB160N04S2-03 ,Low Voltage MOSFETsFeatureV 40 VDS· N-ChannelR 2.9 mWDS(on)· Enhancement modeI 160 AD· High Current RatingP- TO263 -7- ..
SPB160N04S2L-03 ,Low Voltage MOSFETsFeatureV 40 VDS· N-ChannelR max. SMD version 2.7 mWDS(on)· Enhancement modeI 160 AD· Logic LevelP- ..
SPB18P06P ,SIPMOS® Parametric SearchFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SST39SF020A-45-4C-WH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020A-45-4I-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020A-70-4C-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020A-70-4C-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020A-70-4C-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020A-70-4C-NHE , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA11N60C3 -SPB11N60C3 -SPI11N60C3-SPP11N60C3
for lowest Conduction Losses & fastest Switching
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1P-TO220-3-31
Maximum Ratings
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Maximum Ratings
Thermal Characteristics
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N60C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
20
24
28
32
40
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.4
0.6
0.8
1.2
1.4
1.6
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP11N60C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
28
32
40
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 11 A pulsed
10
12
16 SPP11N60C3
