SPP08N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPP100N03S2-03 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 30 - - V(BR)DSSV =0V, I =1mAGS D2.1 3 4Gate thresho ..
SPP100N08S2L-07 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPP10N10 ,N-Channel SIPMOS Power TransistorFeatureV100 VDS
SPA08N80C3-SPP08N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP08N80C3
SPA08N80C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP08N80C3
SPA08N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP08N80C3
SPA08N80C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP08N80C3
SPA08N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP08N80C3
SPA08N80C3Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
120 SPP08N80C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
30
35
45
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP08N80C3
SPA08N80C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
20
22
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
