SPP08N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPP08N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPP100N03S2-03 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 30 - - V(BR)DSSV =0V, I =1mAGS D2.1 3 4Gate thresho ..
SPP100N08S2L-07 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPP10N10 ,N-Channel SIPMOS Power TransistorFeatureV100 VDS
SPA08N50C3-SPI08N50C3-SPP08N50C3
for lowest Conduction Losses & fastest Switching
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO262-3-1P-TO220-3-1
Maximum Ratings
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at T=25°C unless otherwise specified
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPP08N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
24
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
SPP08N50C3, SPI08N50C3
SPA08N50C3Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.4 SPP08N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 7.6 A pulsed
10
12
16 SPP08N50C3
